MCH6535 no.7644-1/5 applications ? mosfet gate drivers, low-frequency power amplifier, high-speed switching, motor drivers, muting. features ? composite type with a pnp transistor and an npn transistor contained in one package facilitating high-density mounting. ? ultrasmall package permitting applied sets to be small and slim. ? small on-resistance (ron). specifications ( ) : pnp absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--15)20 v collector-to-emitter voltage v ceo (--12)15 v emitter-to-base voltage v ebo (--)5 v collector current i c (--)1 a collector current (pulse) i cp (--)2 a collector dissipation p c mounted on a ceramic board (600mm 2 5 0.8m) 0.5 w total power dissipation p t mounted on a ceramic board (600mm 2 5 0.8m) 0.55 w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =(--)12v, i e =0 (--)100 na emitter cutoff current i ebo v eb =(--)4v, i c =0 (--)100 na dc current gain h fe v ce =(--)2v, i c =(--10)50ma 300 (700)800 gain-bandwidth product f t v ce =(--)2v, i c =(--)50ma (450)440 mhz output capacitance cob v cb =(--)10v, f=1mhz (6)4 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)400ma, i b =(--)20ma (--120)140 (--240)280 mv base-to-emitter saturation voltage v be (sat) i c =(--)400ma, i b =(--)20ma (--0.9)0.8 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 m a, i e =0 (--15)20 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--12)15 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 m a, i c =0 (--)5 v marking : eh continued on next page. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn7644 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. 42004ea ts im ta-100669 MCH6535 pnp / npn epitaxial planar silicon transistor push-pull circuit applications
MCH6535 no.7644-2/5 continued from preceding page. ratings parameter symbol conditions min typ max unit turn-on time ton see specified test circuit. 30 ns storage time t stg see specified test circuit. (75)165 ns fall time t f see specified test circuit (15)25 ns package dimensions electrical connection unit : mm 2225 switching time test circuit [pnp] [npn] 5 6 1 4 23 1 : emitter1 (pnp tr) 2 : base1 (pnp tr) 3 : collector2 (npn tr) 4 : emitter2 (npn tr) 5 : base2 (npn tr) 6 : collector1 (pnp tr) top view v r r b v cc = --5v v be =5v ++ 50 w input output r l 220 m f 470 m f pw=20 m s i b1 d.c. 1% i b2 i c =20i b1 = --20i b2 = --400ma v r r b v cc =5v v be = --5v + + 50 w input output r l 220 m f 470 m f pw=20 m s i b1 d.c. 1% i b2 i c =20i b1 = --20i b2 =400ma [pnp] [npn] collector-to-emitter voltage, v ce -- mv i c -- v ce collector current, i c -- ma 0 0 --1000 --200 --100 --200 --300 --400 --500 --600 --700 --800 --900 --500 --1000 --800 --900 --100 --300 --400 --600 --700 it05094 --20ma --30ma --15ma --10ma --7ma --5ma --3ma --2ma --1ma --0.5ma i b =0 i c -- v ce collector-to-emitter voltage, v ce -- mv collector current, i c -- ma 0 0 200 100 it05037 400 300 600 500 800 700 1000 900 200 600 400 800 1000 100 500 300 700 900 i b =0 0.3ma 0.6ma 1.0ma 1.5ma 2.0ma 3.0ma 5.0ma 10.0ma 20.0ma 30.0ma 7.0ma 1 : emitter1 (pnp tr) 2 : base1 (pnp tr) 3 : collector2 (npn tr) 4 : emitter2 (npn tr) 5 : base2 (npn tr) 6 : collector1 (pnp tr) sanyo : mcph6 0.25 0.25 0.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 1 123 654 32 5 46 (bottom view) (top view)
MCH6535 no.7644-3/5 [pnp] [npn] [pnp] [pnp] [npn] [npn] collector current, i c -- ma h fe -- i c dc current gain, h fe --1.0 23 57 23 57 23 57 --10 --100 2 3 5 7 100 1000 --1000 it05096 --25 c ta=75 c v ce = --2v 25 c collector current, i c -- ma v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- mv --100 --1000 --1.0 2 3 5 --10 7 2 3 5 7 2 3 5 7 it05097 --1.0 23 57 --10 23 57 23 57 --100 --1000 i c / i b =20 ta=75 c 25 c --25 c collector current, i c -- ma it05098 v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- mv --1.0 --100 --1000 --10 23 57 23 57 --100 2 --1000 357 --10 7 5 3 2 7 5 3 2 i c / i b =50 ta=75 c 25 c --25 c h fe -- i c collector current, i c -- ma dc current gain, h fe it05039 100 1.0 2 3 5 7 10 2 3 5 7 2 3 5 7 100 1000 2 3 5 1000 7 v ce =2v ta=75 c 25 c --25 c v ce (sat) -- i c collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv it05042 1.0 23 57 10 23 57 23 57 100 1000 3 1000 100 2 3 5 7 2 3 5 7 5 7 10 i c / i b =20 ta=75 c --25 c 25 c v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- ma 1.0 23 57 10 23 57 23 57 100 1000 it05043 10 2 3 5 7 2 3 5 7 1000 100 ta=75 c --25 c 25 c i c / i b =50 [pnp] [npn] base-to-emitter voltage, v be -- v i c -- v be collector current, i c -- ma 0 --400 --1200 --600 --800 --1000 --200 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 it05095 v ce = --2v 25 c --25 c ta=75 c i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- ma it05038 0 0 0.2 0.4 0.6 0.8 1.0 1.2 400 1200 800 600 1000 200 ta=75 c 25 c --25 c v ce =2v
MCH6535 no.7644-4/5 [pnp] [npn] [pnp] [npn] collector-to-base voltage, v cb -- v cob -- v cb output capacitance, cob -- pf it05100 27 35 --10 23 --1.0 10 1.0 2 3 2 7 5 3 f=1mhz collector current, i c -- ma f t -- i c gain-bandwidth product, f t -- mhz it05101 --1.0 5 3 --1000 --100 27 5 3 27 5 3 27 --10 v ce = --2v 100 10 1000 7 5 3 2 7 5 3 2 on-resistance, ron -- w f=1mhz --0.1 ron -- i b it06091 2 0.1 7 5 3 2 1.0 7 5 3 10 3 2 57 3 2 57 --1.0 --10 out in 1k w 1k w i b base current, i b -- ma [pnp] [npn] cob -- v cb output capacitance, cob -- pf collector-to-base voltage, v cb -- v it05041 1.0 1.0 10 2 2 3 5 73 2 3 5 7 10 f=1mhz f t -- i c collector current, i c -- ma gain-bandwidth product, f t -- mhz it05040 1.0 23 57 23 57 23 57 10 100 1000 7 100 1000 2 3 5 7 v ce =2v f=1mhz 0.1 ron -- i b it06386 2 0.1 7 5 3 2 1.0 7 5 3 10 3 2 57 3 2 57 1.0 10 out in 1k w 1k w i b on-resistance, ron -- w base current, i b -- ma [pnp] [npn] it05099 collector current, i c -- ma v be (sat) -- i c base-to-emitter saturation voltage, v be (sat) -- v --1.0 357 --10 2357 2357 2 --100 --1000 --10 --1.0 --0.1 7 5 3 2 7 5 3 2 i c / i b =20 ta= --25 c 25 c 75 c v be (sat) -- i c collector current, i c -- ma base-to-emitter saturation voltage, v be (sat) -- v 1.0 23 57 10 23 57 23 57 100 1000 it05044 3 2 5 7 3 1.0 ta= --25 c 75 c 25 c i c / i b =20
MCH6535 no.7644-5/5 ps specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of april, 2004. specifications and information herein are subject to change without notice. 0 0 ambient temperature, ta -- c p c -- ta collector dissipation, p c -- w it06387 0.7 0.6 0.5 0.55 0.4 0.3 0.2 0.1 40 20 100 120 60 80 140 160 total dissipation 1unit mounted on a ceramic board (600mm 2 5 0.8mm)
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